| PART |
Description |
Maker |
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| M58LR128HB M58LR128HB85ZB5E M58LR128HB85ZB5F M58LR |
128 Mbit (8 Mb ??6, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128KT855 M58LR256KT855 M58LR128KT705 M58LR256 |
128 or 256 Mbit (】16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M58LT128HST8ZA6F M58LT128HSB M58LT128HST M58LT128H |
128-Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT128HSB8ZA6F |
128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| N25Q128A13TSF40E N25Q128A13TSF40F N25Q128A13TSF40G |
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
